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K2396A fiches techniques PDF

Renesas - Silicon Power MOS FET

Numéro de référence K2396A
Description Silicon Power MOS FET
Fabricant Renesas 
Logo Renesas 





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K2396A fiche technique
N MOS
UHF TV
MOS
Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm
f = 470 860 MHz
Unit mm
TA = 25
D.C.
VDS
VGS
ID
PT
Rth
Tch
Tstg
60
7
15
290
0.6
200
65 200
V
V
A
W
/W
TA = 25
IGSS
VGS off
IDSS
gm
PO
hD
GL
VGS = 7 V
VDS = 5 V, ID = 50 mA
VDS= 60 V
VDS = 5 V, ID = 3 A, D ID = 100 mA
f = 860 MHz, VDD = 30 V
IDQ = 150 mA 2, Pin = 40 dBm
f = 860 MHz, VDD = 30 V
IDQ = 150 mA 2, Pin = 30 dBm
MIN.
1.5
2.0
90
48
10
TYP.
100
50
12
MAX.
1
4
2
mA
V
mA
S
W
dB
P12404JJ1V0DS00
February 1997 N
1
1997

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