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EMH1307 fiches techniques PDF

ON Semiconductor - P-Channel Power MOSFET

Numéro de référence EMH1307
Description P-Channel Power MOSFET
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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EMH1307 fiche technique
Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26mΩ, Single EMH8
http://onsemi.com
Features
ON-resistance RDS(on)1 : 20mΩ(typ.)
1.8V drive
Protection diode in
Input Capacitance Ciss=1100pF(typ.)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
--20
±10
--6.5
--26
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 EMH1307-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
0.5
2.0
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
876 5
JG
Lot No.
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7

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