|
|
Numéro de référence | C6123 | ||
Description | Silicon power transistor | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
2SC6123
2SC6123
FA DC/DC
hFE VCE(sat)
⎯ hFE2 ≥ 200 @VCE = 2.0 V, IC = 1.0 A
⎯ VCE(sat) ≤ 0.5 V @IC = 4.0 A, IB = 0.2 A
Z
VCE(sat)
hFE NPN
R07DS0329JJ0100
Rev.1.00
2011.04.15
OA
2SC6123(0)-Z-E1-AZ∗1
2SC6123(0)-Z-E2-AZ∗1
2SC6123(0)-Z-E1-AY∗1
2SC6123(0)-Z-E2-AY∗1
∗1. Pb
Sn-Bi
Sn-Bi
Sn 100%
Sn 100%
1000p/
1000p/
1000p/
1000p/
TA = 25
–
–
–
∗1
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
1∗2 PT1
2 PT2
Tj
Tstg
∗1. PW ≤ 10 ms, Duty Cycle ≤ 50 %
∗2. 1 inch×1 inch×0.8 mmt Cu
PW ≤ 300 μs,
Duty Cycle ≤ 10 %
TA = 25°C
TC = 25°C
1 inch×1 inch×70 μm
TO-263 (MP-25Z)
TO-263 (MP-25Z)
TO-263 (MP-25Z)
TO-263 (MP-25Z)
100
60
7.0
5.0
10
2.5
1.5
35
150
55 150
V
V
V
A
A
A
W
W
°C
°C
R07DS0329JJ0100 Rev.1.00
2011.04.15
Page 1 of 5
|
|||
Pages | Pages 7 | ||
Télécharger | [ C6123 ] |
No | Description détaillée | Fabricant |
C6123 | Silicon power transistor | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |