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C6123 fiches techniques PDF

Renesas - Silicon power transistor

Numéro de référence C6123
Description Silicon power transistor
Fabricant Renesas 
Logo Renesas 





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C6123 fiche technique
2SC6123
2SC6123
FA DC/DC
hFE VCE(sat)
hFE2 200 @VCE = 2.0 V, IC = 1.0 A
VCE(sat) 0.5 V @IC = 4.0 A, IB = 0.2 A
Z
VCE(sat)
hFE NPN
R07DS0329JJ0100
Rev.1.00
2011.04.15
OA
2SC6123(0)-Z-E1-AZ1
2SC6123(0)-Z-E2-AZ1
2SC6123(0)-Z-E1-AY1
2SC6123(0)-Z-E2-AY1
1. Pb
Sn-Bi
Sn-Bi
Sn 100%
Sn 100%
1000p/
1000p/
1000p/
1000p/
TA = 25
1
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
12 PT1
2 PT2
Tj
Tstg
1. PW 10 ms, Duty Cycle 50 %
2. 1 inch×1 inch×0.8 mmt Cu
PW 300 μs,
Duty Cycle 10 %
TA = 25°C
TC = 25°C
1 inch×1 inch×70 μm
TO-263 (MP-25Z)
TO-263 (MP-25Z)
TO-263 (MP-25Z)
TO-263 (MP-25Z)
100
60
7.0
5.0
10
2.5
1.5
35
150
55 150
V
V
V
A
A
A
W
W
°C
°C
R07DS0329JJ0100 Rev.1.00
2011.04.15
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