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PDF H5N2507P Data sheet ( Hoja de datos )
| Número de pieza | H5N2507P | |
| Descripción | High Speed Power Switching MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H5N2507P
250V - 50A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
Low leakage current
High speed switching
Low gate charge
Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P )
4
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
G
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAP Note3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0877EJ0200
(Previous: RJJ03G0646-0100)
Rev.2.00
Sep 12, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
250
±30
50
200
50
35
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0877EJ0200 Rev.2.00
Sep 12, 2012
Page 1 of 6
1 page  
H5N2507P
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1 shot
pulse
0.01
10 μ
100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Preliminary
Switching Time Test Circuit
Vin Monitor
50 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0877EJ0200 Rev.2.00
Sep 12, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet H5N2507P.PDF ] | |
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