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PDF FDP036N10A Data sheet ( Hoja de datos )
| Número de pieza | FDP036N10A | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP036N10A
N-Channel PowerTrench® MOSFET
100 V, 214 A, 3.6 mΩ
November 2013
Features
• RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 89 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FDP036N10A
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
100
±20
214*
151*
120
856
658
6.0
333
2.22
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
FDP036N10A
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.45
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP036N10A Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.45oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
tR1,eRcetactnagnuglualarrPPuullssee DDuurraattiioonn[s[seec]c]
10-1
1
©2010 Fairchild Semiconductor Corporation
FDP036N10A Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDP036N10A.PDF ] | |
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