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Número de pieza | FCA20N60S_F109 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FCA20N60S_F109 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-3P
FCA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FCA20N60S / FCA20N60S_F109 REV. A2
1
G
S
FCA20N60S
600
20
12.7
60
± 30
450
20
26
4.5
260
2.1
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCA20N60S
0.48
41.7
Unit
°C/W
°C/W
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA20N60S / FCA20N60S_F109 REV. A2
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FCA20N60S_F109.PDF ] |
Número de pieza | Descripción | Fabricantes |
FCA20N60S_F109 | N-Channel MOSFET | Fairchild Semiconductor |
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