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PDF FDP075N15A Data sheet ( Hoja de datos )

Número de pieza FDP075N15A
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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March 2015
FDP075N15A / FDB075N15A
N-Channel PowerTrench® MOSFET
150 V, 130 A, 7.5 m
Features
• RDS(on) = 6.25 m(Typ.) @ VGS = 10 V, ID = 100 A
• Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
GDS TO-220
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120 A.
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient, D2-PAK (1 in2 Pad of 2-oz Copper), Max.
FDP075N15A_F102
FDB075N15A
150
±20
±30
130*
92
522
588
6.0
333
2.22
-55 to +175
300
FDP075N15A_F102
FDB075N15A
0.45
62.5
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C5
1
www.fairchildsemi.com

1 page




FDP075N15A pdf
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 0.45oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
Rt1e, RcteacntagnuglualraPr uPlusleseDDuurraattiioonn [seecc]]
10-1
1
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C5
5
www.fairchildsemi.com

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