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H5N2512FP-E0-E fiches techniques PDF

Renesas Technology - 250V - 18A - Field Effect Transistor

Numéro de référence H5N2512FP-E0-E
Description 250V - 18A - Field Effect Transistor
Fabricant Renesas Technology 
Logo Renesas Technology 





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H5N2512FP-E0-E fiche technique
H5N2512FP-E0-E
250V - 18A -
RDS(on) = 0.082
(ID = 9 A, VGS = 10 V, Ta = 25C)
RENESAS
: PRSS0003AG-A
( : TO-220FP)
D
1
23
G
S
R07DS0861CJ0100
1.00
Oct 30, 2012
1.
2.
3.
: 1. PW 10 s,
2. Tc = 25C
3. Tch 150C
1%
VDSS
VGSS
ID
ID (pulse)
IDR
IDR (pulse)
IAP
Pch
ch-c
Tch
Tstg
250
30
18
72
18
72
18
35
3.57
150
–55 to +150
(Ta = 25°C)
V
V
A
A
A
A
A
W
C/W
C
C
R07DS0861CJ0100
Oct 30, 2012
1.00
1

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