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YG339N6 fiches techniques PDF

Fuji Semiconductors - Fast Recovery Diode ( Rectifier )

Numéro de référence YG339N6
Description Fast Recovery Diode ( Rectifier )
Fabricant Fuji Semiconductors 
Logo Fuji Semiconductors 





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YG339N6 fiche technique
YG339C6,N6,D6 (5A)
FAST RECOVERY DIODE
(600V / 5A)
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection diagram
YG339C6
1
2
YG339N6
1
2
YG339D6
1
2
3
3
3
Item
Repetitive peak reverse voltage
Symbol
VRRM
Conditions
Rating
600
Unit
V
Non-repetitive peak reverse voltage VRSM
600 V
Isolating voltage
Viso Terminals-to-Case, AC.1min
1500
V
Average output current
Surge current
IO Square wave, duty=1/2, Tc=110°C
IFSM Sine wave 10ms
5*
20
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
*Average forward current of centertap full wave connection
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
Reverse current
**
Reverse recovery time
Thermal resistance
Mechanical characteristics
VFM
IRRM
trr
Rth(j-c)
IFM=2.0A
VR=VRRM
IF=0.1A, IR=0.1A, Irec=0.01A
Junction to case
** Rating per element
2.5
100
0.05
3.5
V
µA
µs
°C/W
Mounting torque
Approximate weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

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