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TH58BVG3S0HBAI4 fiches techniques PDF

Toshiba - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Numéro de référence TH58BVG3S0HBAI4
Description 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
Fabricant Toshiba 
Logo Toshiba 





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TH58BVG3S0HBAI4 fiche technique
TH58BVG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the
register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BVG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TH58BVG3S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
4224 × 128K × 8 × 2
4224 × 8
4224 bytes
(256K + 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 4016 blocks
Max 4096 blocks
Power supply
VCC = 2.7V to 3.6V
Access time
Cell array to register 55 μs typ. (Single Page Read) / 90μs typ. (Multi Page Read)
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
340 μs/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
100 μA max
Package
P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
8bit ECC for each 528Byte is implemented on the chip.
1 2013-09-20C

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