|
|
Numéro de référence | TH58BVG3S0HBAI4 | ||
Description | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TH58BVG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the
register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BVG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TH58BVG3S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
• Organization
Memory cell array
Register
Page size
Block size
x8
4224 × 128K × 8 × 2
4224 × 8
4224 bytes
(256K + 8K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 4016 blocks
Max 4096 blocks
• Power supply
VCC = 2.7V to 3.6V
• Access time
Cell array to register 55 μs typ. (Single Page Read) / 90μs typ. (Multi Page Read)
Serial Read Cycle
25 ns min (CL=50pF)
• Program/Erase time
Auto Page Program
Auto Block Erase
340 μs/page typ.
2.5 ms/block typ.
• Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
100 μA max
• Package
P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
• 8bit ECC for each 528Byte is implemented on the chip.
1 2013-09-20C
|
|||
Pages | Pages 30 | ||
Télécharger | [ TH58BVG3S0HBAI4 ] |
No | Description détaillée | Fabricant |
TH58BVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM | Toshiba |
TH58BVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |