DataSheetWiki


RJK4015DPK fiches techniques PDF

Renesas Technology - High Speed Power Switching MOS FET

Numéro de référence RJK4015DPK
Description High Speed Power Switching MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





RJK4015DPK fiche technique
RJK4015DPK
400V - 30A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.14 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
Preliminary Datasheet
R07DS0446EJ0200
(Previous: REJ03G1590-0100)
Rev.2.00
Jun 21, 2012
1
2
3
D
G
S
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings
400
30
30
90
30
90
10
5.71
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6

PagesPages 7
Télécharger [ RJK4015DPK ]


Fiche technique recommandé

No Description détaillée Fabricant
RJK4015DPK High Speed Power Switching MOS FET Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche