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PDF IRFSL4115PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFSL4115PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96198A
IRFS4115PbF
IRFSL4115PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
150V
10.3m:
12.1m:
ID (Silicon Limited)
c99A
S ID (Package Limited) 195A
D
S
G
D2Pak
IRFS4115PbF
D
S
D
G
TO-262
IRFSL4115PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jkJunction-to-Ambient
www.irf.com
D
Drain
S
Source
Max.
99
70
195
396
375
2.5
± 20
18
-55 to + 175
300
x x10lb in (1.1N m)
830
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
03/09/11
1 page  
IRFS/SL4115PbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R 1R 1
C
i=
Ci
=τi /Rτ i/iRi
R2R 2
τ2 τ2
Ri (°C/W)
τCτC 0.245
0.155
τi (sec)
0.0059149
0.0006322
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 13 Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
50
IF = 62A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
20 20
10 10
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 14 - Typical Recovery Current vs. dif/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 15 - Typical Recovery Current vs. dif/dt
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
1000
1200
500 600
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 16 - Typical Stored Charge vs. dif/dt
www.irf.com
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Stored Charge vs. dif/dt
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFSL4115PbF.PDF ] | |
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