RJK0602DPN-E0 Datasheet PDF - Renesas Technology
| Part Number | RJK0602DPN-E0 | |
| Description | N-Channel MOS FET | |
| Manufacturers | Renesas Technology | |
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There is a preview and RJK0602DPN-E0 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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RJK0602DPN-E0
N-Channel MOS FET
60 V, 100 A, 3.9 m
Features
High speed switching
Low drive current
Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)
Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
1G
Preliminary Datasheet
R07DS0653EJ0200
Rev.2.00
Aug 24, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H , Tch = 25C, Rg 50,
3. Tc = 25C
Ratings
60
±20
100
300
100
50
188
150
0.83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0653EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6
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RJK0602DPN-E0
10.0
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
3
1 D=1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.01
0.03
1shot pulse
0.01
100 μ
1m
θch – c(t) = γs (t) • θch – c
θch – c = 0.83°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
25 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 30 V
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
R07DS0653EJ0200 Rev.2.00
Aug 24, 2012
Page 5 of 6
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJK0602DPN-E0 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RJK0602DPN-E0.PDF Datasheet ] | |
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