NP90N04MUG Datasheet PDF - Renesas
| Part Number | NP90N04MUG | |
| Description | N-CHANNEL POWER MOS FET | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N04MUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP90N04MUG-S18-AY Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
FEATURES
• Super low on-state resistance
RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A)
• Channel temperature 175 degree rated
(TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±90
±360
217
1.8
175
−55 to +175
60
360
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.69
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18665EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
VGS = 10 V
ID = 45 A
4
2
0
-75
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
SWITCHING CHARACTERISTICS
1000
100
td(on)
td(off)
VDD = 20 V
VGS = 10 V
RG = 0 Ω
tr
10
tf
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP90N04MUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 12
35 VDD = 32 V
30
20 V
8V
25
9
20 6
VGS
15
10
5
0
0
VDS
50 100
3
ID = 90 A
0
150 200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D18665EJ2V0DS
5
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| Information | Total 8 Pages | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NP90N04MUG | The function is N-CHANNEL POWER MOS FET. Renesas | |
| NP90N04MUK | The function is MOS FIELD EFFECT TRANSISTOR. Renesas | |
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