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IRF7739L2PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7739L2PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7739L2PBF fiche technique
l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7739L2PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
40V min ±20V max 0.70m@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Applicable DirectFET Outline and Substrate Outline 
SB SC
M2
M4
L8 DirectFET™ ISOMETRIC
L4 L6 L8
The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Part number
Package Type
IRF7739L2TRPbF DirectFET2 Large Can
IRF7739L2TR1PbF DirectFET2 Large Can
Standard Pack
Form
Q uan tity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
0.93
ID = 160A
0.92
8 0.91
6 TJ = 25°C
0.90
0.89
4 0.88
VGS = 10V
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80 120
Units
V
A
mJ
A
160 200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.021mH, RG = 25, IAS = 160A.
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014

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