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NP110N03PUG fiches techniques PDF

Renesas - N-CHANNEL POWER MOS FET

Numéro de référence NP110N03PUG
Description N-CHANNEL POWER MOS FET
Fabricant Renesas 
Logo Renesas 





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NP110N03PUG fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N03PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N03PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP110N03PUG
TO-263 (MP-25ZP)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on) = 1.5 mMAX. (VGS = 10 V, ID = 55 A)
Low Ciss: Ciss = 16400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 288
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR 62
Repetitive Avalanche Energy Note2
EAR 384
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch 150°C, VDD = 15 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16851EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004

PagesPages 7
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