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RJK0703DPP-E0 fiches techniques PDF

Renesas Technology - N-Channel MOS FET

Numéro de référence RJK0703DPP-E0
Description N-Channel MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK0703DPP-E0 fiche technique
RJK0703DPP-E0
N-Channel MOS FET
75 V, 70 A, 6.7 m
Features
High speed switching
Low drive current
Low on-resistance RDS(on) = 5.3 mtyp. (at VGS = 10 V)
Package TO-220FP
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H, Tch = 25C, Rg 50,
3. Tc = 25C
Preliminary Datasheet
R07DS0630EJ0200
Rev.2.00
Oct 15, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
75
±20
70
210
70
35
184
25
5.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0630EJ0200 Rev.2.00
Oct 15, 2012
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