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PDF UT3418 Data sheet ( Hoja de datos )
| Número de pieza | UT3418 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UT3418 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
UT3418
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 60mΩ @VGS = 10 V
* RDS(ON) < 70mΩ @VGS = 4.5 V
* RDS(ON) < 155mΩ @VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3418G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-226.D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UT3418.PDF ] | |
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