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PDF FQI27N25TU_F085 Data sheet ( Hoja de datos )
| Número de pieza | FQI27N25TU_F085 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQB27N25TM_F085/FQI27N25TU_F085
N-Channel MOSFET
250 V, 25.5 A, 131 mΩ
D
May 2014
Features
Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A
Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
GS
TO-263AB
D TO-262AB
G
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
250
±30
25.5
See Figure 4
972
417
3.3
-55 to + 150
0.3
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FQB27N25TM
FQI27N25TU
Device
FQB27N25TM_F085
FQI27N25TU_F085
Package
TO-263AB
TO-262AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
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the solder
maximum
©2014 Fairchild Semiconductor Corporation
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
80
80μs PULSE WIDTH
Tj=25oC
60
40
20
VGS
15V Top
10V
8V
7V
6V Bottom
0 6V
0 4 8 12 16 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
60
80μs PULSE WIDTH
Tj=150oC
40
20
1V5GVS5T.5oVp
10V
8V
7V
6V
5.5V
5V Bottom
5V
0 0 4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
20
550
ID = 25.5A
440
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
330 TJ = 150oC
220
TJ = 25oC
110
0
56789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. RDSON vs. Gate Voltage
10
2.8
PULSE DURATION = 80μs
2.4 DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.6
-80
ID = 25.5A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized RDSON vs. Junction
Temperature
1.4
VGS = VDS
1.2 ID = 250μA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Gate Threshold Voltage vs.
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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