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FQA8N90C_F109 fiches techniques PDF

Fairchild Semiconductor - N-Channel QFET MOSFET

Numéro de référence FQA8N90C_F109
Description N-Channel QFET MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQA8N90C_F109 fiche technique
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω
Features
• 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N90C_F109
900
8.0
5.1
32
± 30
850
8.0
24
4.0
240
1.92
-55 to +150
300
FQA8N90C_F109
0.52
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C2
1
www.fairchildsemi.com

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