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ROHM Semiconductor - N-channel 600V 35A Power MOSFET

Numéro de référence R6035KNZ1
Description N-channel 600V 35A Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R6035KNZ1 fiche technique
R6035KNZ1
  Nch 600V 35A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.102Ω
±35A
379W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-247
 
      
lInner circuit
 
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
R6035KNZ1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
±35
±105
V
A
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 6.6 A
Avalanche energy, single pulse
EAS*3
796 mJ
Power dissipation (Tc = 25°C)
PD 379 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150914 - Rev.001    

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