DataSheet39.com

What is RJK60S3DPD?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "High Speed Power Switching MOS FET".


RJK60S3DPD Datasheet PDF - Renesas

Part Number RJK60S3DPD
Description High Speed Power Switching MOS FET
Manufacturers Renesas 
Logo Renesas Logo 


There is a preview and RJK60S3DPD download ( pdf file ) link at the bottom of this page.





Total 8 Pages



Preview 1 page

No Preview Available ! RJK60S3DPD datasheet, circuit

RJK60S3DPD
600V - 12A - SJ MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0731EJ0300
Rev.3.00
Oct 12, 2012
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.35 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75.
3. STch = 25C, Tch 150C
4. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note4
ch-c
Tch
Tstg
Ratings
600
+30, 20
12.0
7.6
24
12
24
3
0.49
73.5
1.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0731EJ0300 Rev.3.00
Oct 12, 2012
Page 1 of 7

line_dark_gray
RJK60S3DPD equivalent
RJK60S3DPD
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5 ID = 10 mA
4
3 1 mA
0.1 mA
2
1
VDS = 10 V
0
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
800
700
600
500
ID = 10 mA
VGS = 0
400
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 1.7°C/W
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
R07DS0731EJ0300 Rev.3.00
Oct 12, 2012
Page 5 of 7


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJK60S3DPD electronic component.


Information Total 8 Pages
Link URL [ Copy URL to Clipboard ]
Download [ RJK60S3DPD.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
RJK60S3DPDThe function is High Speed Power Switching MOS FET. RenesasRenesas
RJK60S3DPEThe function is High Speed Power Switching SJ MOS FET. RenesasRenesas
RJK60S3DPP-E0The function is 600V - 12A - SJ MOS FET High Speed Power Switching. RenesasRenesas

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

RJK6     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search