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Número de pieza | FDI8441 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDI8441 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! July 2007
FDI8441
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
Features
Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Applications
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
tm
©2007 Fairchild Semiconductor Corporation
FDI8441 Rev.C0
1
www.fairchildsemi.com
1 page Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
LIMITED BY rDS(on)
0.1
1
TC = 25oC
10
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40
TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
160
VGS = 10V PULSE DURATION = 80μs
VGS = 5V
DUTY CYCLE = 0.5% MAX
120
VGS = 4.5V
80 VGS = 4V
40
VGS = 3.5V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
40
TJ = 25oC
30
TJ = 175oC
20
10
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDI8441 Rev.C0
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDI8441.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDI8441 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDI8441_F085 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDI8442 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDI8442_F085 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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