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PDF NP82N06PDG Data sheet ( Hoja de datos )
| Número de pieza | NP82N06PDG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06PDG-E1-AY Note
NP82N06PDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low Ciss
Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±270
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C)
PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 37
Repetitive Avalanche Energy Note2
EAR 137
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2006
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 41 A
12 Pulsed
10
8 VGS = 5 V
6
4 VGS = 10 V
2
0
-100
-50 0 50 100 150
Tch - Channel Temperature - °C
200
SWITCHING CHARACTERISTICS
1000
100
td(off)
td(on)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tf
10
ID - Drain Current - A
tr
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
VGS = 10 V
VGS = 5 V
VGS = 0 V
0.1
Pulsed
0.01
0
0.5
1
VF(S-D) - Source to Drain Voltage - V
1.5
NP82N06PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
VGS = 0 V
f = 1 MHz
100
0.1
1
C rss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50 VDD = 48 V
VDD = 30 V
40 VDD = 12 V
10
8
30
20
10
0
0
6
VGS
4
VDS
2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
di/dt = 100 A/μs
VGS = 0 V
10
IF - Diode Forward Current - A
100
Data Sheet D18227EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP82N06PDG.PDF ] | |
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