PDF FDP085N10A Data sheet ( Hoja de datos )

Número de pieza	FDP085N10A
Descripción	N-Channel PowerTrench MOSFET
Fabricantes	micross
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No Preview Available ! N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2 for ordering part numbers & supply formats FDP085N10A Applications Features • High density AC / DC Converters • Motor drives & Micro Inverters • High Power & Current Handling Capability • Low RDS (on) per mm2 Maximum Ratings • Low Gate Charge, Fast Switching Symbol VDSS VGSS ID IDM TJ, TSTG EAS dv/dt Parameter Drain to Source Voltage Drain Current2 Gate to Source Voltage Continuous (TC = 25°C) Drain Current3 Continuous (TC = 100°C) Pulsed Operation Junction & Storage Temperature Single Pulsed Avalanche Energy4 Peak Diode Recovery dv/dt4 L = 3mH, IAS = 13.4A, RG=25Ω Starting TJ =25°C ISD ≤ 96A, di/dt ≤ 200A/µs, VDD ≤ BVDSS Starting TJ=25°C Ratings 100 ±20 96 68 384 -55 to 175 269 6 Units V V A °C mJ V/ns Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVDSS VGS(th) IDSS IGSS RDS(on) Drain to Source Breakdown Voltage Gate threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current @ 150°C Gate to Body Leakage Current Static Drain to Source On Resistance1 ID = 250µA, VGS = 0V VGS = VDS, ID =250µA VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V VGS = ±20V , VDS = 0V VGS = 10V, ID = 96A 100 2.0 - - - - Notes: 1. Defined by chip design, not subject to 100% production test at wafer level 2. Performance will vary based on assembly technique and substrate choice 3. Repetitive Rating: Pulse width limited by maximum junction temperature - -V - 4.0 V - 1 µA - 500 - ±100 nA 7.35 8.5 mΩ Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components 1 page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
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