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LBSS123LT1G fiches techniques PDF

Leshan Radio Company - N-CHANNEL POWER MOSFET

Numéro de référence LBSS123LT1G
Description N-CHANNEL POWER MOSFET
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBSS123LT1G fiche technique
LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET
LBSS123LT1G
FEATURE
ƽ Pb-Free Package is available.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1G
S-LBSS123LT1G
SA
3000/Tape&Reel
LBSS123LT3G
S-LBSS123LT3G
SA 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Symbol
VDSS
VGS
VGSM
ID
IDM
Value
100
±20
±40
0.17
0.68
Unit
Vdc
Vdc
Vpk
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to
RqJA
556
°C/W
Ambient
Junction and Storage Temperature TJ, Tstg –55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0  0.75  0.062 in.
LBSS123LT1G
S-LBSS123LT1G
3
1
2
SOT-23
Drain
3
1
Gate
2 Source
Rev .A 1/4

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