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LBSS84LT1G fiches techniques PDF

Leshan Radio Company - Power MOSFET ( Transistor )

Numéro de référence LBSS84LT1G
Description Power MOSFET ( Transistor )
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBSS84LT1G fiche technique
LESHAN RADIO COMPANY, LTD.
POWER MOSFET
P-CHANNEL 130mAmps,50Volts
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters,
load switching , power management in portable and battery–
powered products such as computers , printers , cellular and
cordless telephones.
LBSS84LT1G
S-LBSS84LT1G
3
FEATURES
1)Energy Efficient
2)Miniature SOT–23 Surface Mount Package Saves Board Space
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
4)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
SOT-23
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS84LT1G PD 3000/Tape&Reel
LBSS84LT3G
PD 10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 μs)
Total Power Dissipation @ TA = 25°C
Junction and Storage temperature
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for
SolderingPurposes, for 10 seconds
Symbol Limits Unit
VDSS
50
V
VGS ±20 V
mA
ID 130
IDM 520
PD 225 mW
Tj,Tstg −55+150
RΘJA
556 /W
TL 260
May,2015
Rev.B 1/5

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