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PDF L2N7002WT1G Data sheet ( Hoja de datos )
| Número de pieza | L2N7002WT1G | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT–323
●FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●ORDERING INFORMATION
Device
Marking
L2N7002WT1G
6C
L2N7002WT3G
6C
●MAXIMUM RATINGS(Ta = 25℃)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VDSS
VDGR
Value
60
60
Drain Current
– Continuous TC = 25C (Note 1.)
TC = 100C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 s)
ID
ID
IDM
VGS
VGSM
±115
±75
±800
±20
±40
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Unit
Vdc
Vdc
mAdc
Simplified Schematic
Gate 1
3 Drain
Source 2
Vdc
Vpk
(Top View)
●THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25C
PD
225 mW
Derate above 25C
1.8 mW/C
Thermal Resistance, Junction to Ambient RθJA 556 C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25C
Derate above 25C
PD
300 mW
2.4 mW/C
Thermal Resistance, Junction to Ambient Rθ JA 417 C/W
Junction and Storage Temperature
TJ, Tstg -55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2N7002WT1G.PDF ] | |
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