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PDF FSYC9055D Data sheet ( Hoja de datos )
| Número de pieza | FSYC9055D | |
| Descripción | Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
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FSYC9055D, FSYC9055R
July 1999
Features
POSSFOSIBTBLYSECOS9L0UE5BT5SEDT,PIFTRSUOTTDYEUCPC9R0TO55DRUCT
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
Description
[ /Title
(FSYC
9055D,
FSYC
9055R)
/Sub-
ject
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant
P-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant P-
Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCI
• 59A, -60V, rDS(ON) = 0.027Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14Neutrons/cm2g
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSYC9055D1
10K TXV
FSYC9055D3
100K
Commercial
FSYC9055R1
100K
TXV
FSYC9055R3
100K
Space
FSYC9055R4
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
D
Formerly available as type TA17750.
G
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1999
1
File Number 4525.1
1 page  
FSYC9055D, FSYC9055R
Typical Performance Curves Unless Otherwise Specified (Continued)
300
100
STARTING TJ = 150oC
STARTING TJ = 25oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
50Ω
VGS ≤ 20V
50Ω
DUT
+
VDD
-
50V-150V
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
0V
VGS = -12V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
VGS
10%
50%
PULSE WIDTH
10%
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSYC9055D.PDF ] | |
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