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BC857A fiches techniques PDF

Taiwan Semiconductor - 0.2 Watts PNP Plastic-Encapsulate Transistors

Numéro de référence BC857A
Description 0.2 Watts PNP Plastic-Encapsulate Transistors
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BC857A fiche technique
BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Weight : 0.008 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Symbol
Power Dissipation
PD
BC856
Collector-Base Voltage
BC857
VCBO
BC858
BC856
Collector-Emitter Voltage
BC857
VCEO
BC858
Emitter-Base Voltage
VEBO
Collector Current
IC
Junction and Storage Temperature Range
TJ , TSTG
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Value
200
-80
-50
-30
-65
-45
-30
-5
-0.1
-55 to + 150
Units
mW
V
V
V
A
°C
Version : F14

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