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WEITRON - General Purpose Transistor PNP Silicon

Numéro de référence BC858C
Description General Purpose Transistor PNP Silicon
Fabricant WEITRON 
Logo WEITRON 





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BC858C fiche technique
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1
2
SOT-23
MARKING DIAGRAM
3
XX = Device
Code (See
1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Unit
V
V
V
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
PD
R θJA
Max
225
1.8
556
300
2.4
417
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= -10mA)
BC856 Series
BC857 Series
V(BR)CEO
-65
-45
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
BC856 Series
BC857 Series
V(BR)CES
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Collector-Base Breakdown Voltage
(IC=-10 µA)
BC856 Series
BC857 Series
V(BR)CBO
-80
-50
-
-
-V
-
BC858, BC859 Series
-30 - -
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
-5.0
-5.0
-5.0
- -V
--
--
Collector Cutoff Current (VCB=-30V)
(VCB=-30V, TA=150 C)
ICBO
-
-
- -15 nA
- -4.0 mA
WEITRON
http://www.weitron.com.tw
1/4 Rev A 12-Apr-05

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