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Intersil Corporation - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Numéro de référence FSYC260R1
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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FSYC260R1 fiche technique
July 1998
FSYC260D,
FSYC260R
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 46A, 200V, rDS(ON) = 0.050
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 17nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NO./BRAND
10K Commercial
FSYC260D1
10K TXV
FSYC260D3
100K
Commercial
FSYC260R1
100K
TXV
FSYC260R3
100K
Space
FSYC260R4
Formerly available as type TA17667.
Description
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
D
G
S
Packaging
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4549

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