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Número de pieza | S-LMBT3904LT1G | |
Descripción | General Purpose Transistor | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S-LMBT3904LT1G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
• We declare that the material of product compliance with RoHS
requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904LT1G
S-LMBT3904LT1G
3
1
LMBT3904LT1G
S-LMBT3904LT1G
1AM
3000/Tape & Reel
LMBT3904LT3G
S-LMBT3904LT3G
MAXIMUM RATINGS
1AM
10000/Tape & Reel
Rating
Symbol
Value
Collector–Emitter Voltage
V CEO
40
Collector–Base Voltage
V CBO
60
Emitter–Base Voltage
V EBO
6.0
Collector Current — Continuous I C
200
Unit
Vdc
Vdc
Vdc
mAdc
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 10 µAdc)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc)
V (BR)EBO
Base Cutoff Current
I BL
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
I CEX
( V CE = 30Vdc, V EB = 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
40
60
6.0
—
—
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
Rev.O 1/7
1 page 20
10
5.0
2.0
1.0
0.5
0.2
0.1
LESHAN RADIO COMPANY, LTD.
LMBT3904LT1G,S-LMBT3904LT1G
10
7.0
5.0
3.0
2.0
1.0
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 13. Input Impedance
10
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
10
1000
TJ = +150°C
+25°C
100
- 55°C
VCE = 1.0 V
10
1
0.1
1.0
0.8
0.6
0.4
0.2
0
0.01
1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1000
IC = 1.0 mA
10 mA
30 mA
TJ = 25°C
100 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
2.0 3.0
5.0 7.0 10
Rev.O 5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet S-LMBT3904LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
S-LMBT3904LT1G | General Purpose Transistor | Leshan Radio Company |
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