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PDF NP160N04TUJ Data sheet ( Hoja de datos )
| Número de pieza | NP160N04TUJ | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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NP160N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0021EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP160N04TUJ -E1-AY ∗1
NP160N04TUJ -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 pcs/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin, Taping (E1 type)
TO-263-7pin, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
Ratings
40
±20
±160
±640
250
1.8
175
−55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
R07DS0021EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
1 page  
NP160N04TUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
VGS = 10 V
ID = 80 A
3.0 Pulsed
2.0
1.0
0.0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
td(off)
td(on)
tr
tf
10 100 1000
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
16
ID = 160 A
14
VDD = 32 V
20 V
8V
12
10
8
VGS 6
4
VDS 2
0
20 40 60 80 100 120 140
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100 1000
IF - Drain Current - A
R07DS0021EJ0100 Rev.1.00
Jul 01, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP160N04TUJ.PDF ] | |
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