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Numéro de référence | K2796 | ||
Description | MOSFET ( Transistor ) - 2SK2796 | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
D
G
S
ADE-208-534C (Z)
4th. Edition
Jun 1998
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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Pages | Pages 10 | ||
Télécharger | [ K2796 ] |
No | Description détaillée | Fabricant |
K2796 | MOSFET ( Transistor ) - 2SK2796 | Hitachi Semiconductor |
K2799 | MOSFET ( Transistor ) - 2SK2799 | Shindengen Electric |
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