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Número de pieza | RJK6034DPP-E0 | |
Descripción | MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK6034DPP-E0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK6034DPP-E0
600V - 1A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID Note3
ID (pulse) Note1
IDR
IDR
Note1
(pulse)
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS0615EJ0100
Rev.1.00
Feb 12, 2013
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
1
2
1
2
21.1
5.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0615EJ0100 Rev.1.00
Feb 12, 2013
Page 1 of 6
1 page RJK6034DPP-E0
10
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Tc = 25°C
1 D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1shot pulse
0.01
100 μ
1m
θch – c(t) = γ s (t) • θ ch – c
θch – c = 5.92°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10
100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0615EJ0100 Rev.1.00
Feb 12, 2013
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK6034DPP-E0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK6034DPP-E0 | MOS FET | Renesas |
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