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Hitachi Semiconductor - High Density Dynamic RAM Module

Numéro de référence HB56A132SBW
Description High Density Dynamic RAM Module
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HB56A132SBW fiche technique
HB56A132 Series
1,048,576-word × 32-Bit High Density Dynamic RAM Module
ADE-203-
Rev. 0.0
Dec. 1, 1995
Description
The HB56A132 is a 1 M × 32 dynamic RAM module, mounted 8 pieces of (4-Mbit) DRAM
(HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 is 72-pin single in-line package.
Therefore, the HB56A132 makes high density mounting possible without surface mount technology. The
HB56A132 provides common data inputs and outputs. Decoupling capacitors are mounted beneath each SOJ.
Features
• 72-pin single in-line package
— Lead pitch: 1.27 mm
• Single 5 V (± 5%) supply
• High speed
— Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
— Active mode: 4.62W/4.20W/3.78W (max)
— Standby mode: 84 mW (max)
4.2 mW (max) (L-version)
• Fast page mode capability
• 1,024 refresh cycle: 16 ms
128 ms (L-version)
• 2 variations of refresh
RAS only refresh
CAS before RAS refresh
• TTL compatible

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