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PDF NP109N055PUJ Data sheet ( Hoja de datos )
| Número de pieza | NP109N055PUJ | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP109N055PUJ-E1B-AY Note
NP109N055PUJ-E2B-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
Ciss = 6900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
220
Total Power Dissipation (TA = 25°C)
PT2
1.8
Channel Temperature
Tch 175
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg −55 to +175
EAS 291
IAR 54
EAR 291
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19729EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
1 page  
NP109N055PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
VGS = 10 V
ID = 55 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
100
td(off)
10
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
td(on)
tr
tf
10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50 VDD = 44 V
28 V
40 11 V
10
8
30
20
10
0
0
6
VGS
4
VDS
2
ID = 110 A
0
20 40 60 80 100 120 140
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
100
IF - Diode Forward Current - A
1000
Data Sheet D19729EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP109N055PUJ.PDF ] | |
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