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PDF ZXMN10A09K Data sheet ( Hoja de datos )

Número de pieza ZXMN10A09K
Descripción 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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No Preview Available ! ZXMN10A09K Hoja de datos, Descripción, Manual

A Product Line of
Diodes Incorporated
ZXMN10A09K
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
RDS(on)
85m@ VGS = 10V
100m@ VGS = 6V
ID
TA = 25°C
7.7A
7.1A
Features and Benefits
Low input capacitance
Low on-resistance
Fast switching speed
“Green” Component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET features low on-resistance, fast switching and a high
avalanche withstand capability, making it ideal for high efficiency
power management applications.
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Uninterrupted power supply
TO252-3L
Mechanical Data
Case: TO252-3L
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
D
Top View
D
GS
Pin Out – Top View
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMN10A09KTC
Marking
ZXMN10A09
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
10A09
YYWW
ZXMN = Product Type Marking Code, Line 1
10A09 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
1 of 8
www.diodes.com
January 2010
© Diodes Incorporated

1 page




ZXMN10A09K pdf
Typical Characteristics
A Product Line of
Diodes Incorporated
ZXMN10A09K
T = 25°C
10
10V
5V
4.5V
4V
V
1 GS
3.5V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
V = 10V
DS
0.1
345
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
1
T = 25°C
3.5V
V 4V
GS
4.5V
5V
0.1
10V
0.1 1 10
I Drain Current (A)
D
On-Resistance v Drain Current
T = 150°C
10
10V
5V
4.5V
4V
3.5V
V
1 GS
3V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
2.0
V = 10V
1.8 GS
I = 4.6A
1.6
D
R
DS(on)
1.4
1.2
V =V
GS DS
1.0 I = 250uA
D
0.8
0.6
0.4
-50
V
GS(th)
0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
T = 150°C
1
0.1
T = 25°C
0.01
0.2 0.4 0.6 0.8 1.0 1.2
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
5 of 8
www.diodes.com
January 2010
© Diodes Incorporated

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