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PDF ZXMN6A25N8TA Data sheet ( Hoja de datos )
| Número de pieza | ZXMN6A25N8TA | |
| Descripción | 60V SO8 N-channel enhancement mode MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) (Ω)
0.050 @ VGS=10V
0.070 @ VGS=4.5V
ID(A)
7.0
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• SO8 package
Applications
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A25N8TA
Reel size
(inches)
7
Device marking
ZXMN6A25
Tape width
(mm)
12
Quantity
per reel
500
D
G
S
SD
SD
SD
GD
Top view
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
1 page  
Typical characteristics
ZXMN6A25N8
T = 25°C
10
1
10V
4.5V
4V
3.5V
3V
0.1
VGS
0.01
2.5V
0.1 1
10
VDS Drain-Source Voltage (V)
Output Characteristics
T = 150°C
10
1
10V 4.5V
4V
3.5V
3V
0.1
0.01
2.5V
V
GS
2V
0.1 1 10
VDS Drain-Source Voltage (V)
Output Characteristics
10
T = 150°C
1
T = 25°C
0.1
V = 10V
DS
0.01
234
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
1.4
VGS = 10V
1.2 I = 4.5A
D
RDS(on)
1.0
0.8 V
GS(th)
0.6
VGS = VDS
ID = 250uA
0.4
5 -50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
1000
100
10
1
2.5V
VGS
3V
T = 25°C
3.5V
4V
4.5V
0.1 10V
0.01
0.01 0.1 1 10
On-ResisItDanDcraeinvCDurrareinnt
(A)
Current
100
T = 150°C
10
1 T = 25°C
0.1
0.01
0.2
0.4 0.6 0.8 1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXMN6A25N8TA.PDF ] | |
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