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Numéro de référence | ZXMN3G32DN8 | ||
Description | 30V SO8 dual N-channel enhancement mode MOSFET | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS
30
RDS(on) (Ω)
0.028 @ VGS= 10V
0.045 @ VGS= 4.5V
ID (A)
7.1
5.6
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
• Low on-resistance
• 4.5V gate drive capability
• Fast switching bullet
D1
G1
Applications
• DC-DC Converters
• Power management functions
• Motor Control
• Backlighting
Ordering information
DEVICE
ZXMN3G32DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S1
S1
G1
S2
G2
Device marking
ZXMN
3G32D
G2
D2
S2
D1
D1
D2
D2
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
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Pages | Pages 8 | ||
Télécharger | [ ZXMN3G32DN8 ] |
No | Description détaillée | Fabricant |
ZXMN3G32DN8 | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
ZXMN3G32DN8TA | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex Semiconductors |
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