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PDF ZXMN3A14F Data sheet ( Hoja de datos )
| Número de pieza | ZXMN3A14F | |
| Descripción | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
BVDSS
30V
Max RDS(on)
65mΩ @ VGS = 10V
95mΩ @ VGS = 4.5V
Max ID
TA = 25°C
(Note 4)
3.2A
2.6A
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
A Product Line of
Diodes Incorporated
ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• Low gate charge
• Low threshold
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
SOT23
Top View
S
D
G
Top View
Pin Out
Equivalent Circuit
Ordering Information (Note 3)
Product
ZXMN3A14FTA
Marking
314
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000 Units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For more packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
314
314 = Product Type Marking Code
1 of 8
www.diodes.com
April 2012
© Diodes Incorporated
1 page  
Typical Characteristics
A Product Line of
Diodes Incorporated
ZXMN3A14F
T = 25°C
10
10V 6V
4.5V
1
3.5V
3V
2.5V
V
GS
0.1 0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
10V 6V
4V
3V
2.5V
1
2V
V
GS
0.1 0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
V = 10V
DS
1 T = 150°C
T = 25°C
0.11.5 2.0 2.5 3.0
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
3.5
1.6
V = 10V
GS
1.4 I = 3.2A
D
1.2
R
DS(on)
1.0
0.8
V
GS(th)
0.6
V =V
GS DS
I = 250uA
D
0.-450
0
50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
2.5V
1
3V
V
GS
3.5V
4V
0.1 6V
T = 25°C
10V
1 10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
T = 25°C
0.1
0.4 0.6 0.8
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.0
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
5 of 8
www.diodes.com
April 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXMN3A14F.PDF ] | |
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