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Numéro de référence | KGF50N60KDA | ||
Description | Field Stop Trench IGBT | ||
Fabricant | KEC | ||
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1 Page
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
High speed switching
High ruggedness, temperature stable behavior
Short Circuit Withstand Times 10us
Extremely enhanced avalanche capability
KGF50N60KDA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES 600 V
Gate-Emitter Voltage
VGES
20 V
Collector Current
@Tc=25
@Tc=100
100 A
IC
50 A
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100
Diode Maximum Forward Current
ICM* 150 A
IF 50 A
IFM 100 A
Maximum Power Dissipation
@Tc=25
@Tc=100
277 W
PD
111 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.45
1.0
40
UNIT
/W
/W
/W
E
C
G
2013. 8. 19
Revision No : 2
1/8
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Pages | Pages 8 | ||
Télécharger | [ KGF50N60KDA ] |
No | Description détaillée | Fabricant |
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