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CEV2306 fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEV2306
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEV2306 fiche technique
CEV2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 2A, RDS(ON) = 65m@VGS = 4.5V.
RDS(ON) = 80m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-323 package.
D
DS
G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±8
Drain Current-Continuous
Drain Current-Pulsed a
ID 2
IDM 8
Maximum Power Dissipation
PD 0.42
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
360
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2011.Mar.
http://www.cet-mos.com

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