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CEP04N7G fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEP04N7G
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEP04N7G fiche technique
CEP04N7G/CEB04N7G
CEF04N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP04N7G
CEB04N7G
CEF04N7G
VDSS
700V
700V
700V
RDS(ON)
3.3Ω
3.3Ω
3.3Ω
ID
4A
4A
4A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
4
16
84
0.67
4d
16 d
35
0.28
Single Pulsed Avalanche Energy f
EAS 43
Single Pulsed Avalanche Current f
IAS 3.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
3.6
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2009.July
http://www.cet-mos.com

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