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Numéro de référence | CEP07N7 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP07N7/CEB07N7
CEF07N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP07N7
CEB07N7
CEF07N7
VDSS
700V
700V
700V
RDS(ON)
1.5Ω
1.5Ω
1.5Ω
ID
6.6A
6.6A
6.6A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
700
±30
6.6
26.4
166
1.3
6.6d
26.4d
50
0.4
Repetitive Avalanche Energy
EAR 3.6
Single Pulsed Avalanche Energy h
Operating and Store Temperature Range
EAS
TJ,Tstg
38.88
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
mJ
mJ
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2012.Nov
http://www.cet-mos.com
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Pages | Pages 4 | ||
Télécharger | [ CEP07N7 ] |
No | Description détaillée | Fabricant |
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