DataSheetWiki


D864 fiches techniques PDF

Inchange Semiconductor - NPN Transistor - 2SD864

Numéro de référence D864
Description NPN Transistor - 2SD864
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





D864 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
i.cnABSOLUTE MAXIMUM RATINGS (Ta=25)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation
PC TC=25
Tj Junction Temperature
6A
30 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

PagesPages 2
Télécharger [ D864 ]


Fiche technique recommandé

No Description détaillée Fabricant
D862 NPN Transistor - 2SD862 Wing Shing Computer Components
Wing Shing Computer Components
D863 NPN Transistor - 2SD863 Sanyo Semiconductor Corporation
Sanyo Semiconductor Corporation
D864 NPN Transistor - 2SD864 Inchange Semiconductor
Inchange Semiconductor
D869 NPN Transistor - 2SD869 Mospec Semiconductor Corporation
Mospec Semiconductor Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche