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Numéro de référence | D864 | ||
Description | NPN Transistor - 2SD864 | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
i.cnABSOLUTE MAXIMUM RATINGS (Ta=25℃)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation
PC TC=25℃
Tj Junction Temperature
6A
30 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ D864 ] |
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