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PDF MBR10100 Data sheet ( Hoja de datos )

Número de pieza MBR10100
Descripción 10 AMPERES SCHOTTKY BARRIER RECTIFIERS
Fabricantes Pan Jit 
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No Preview Available ! MBR10100 Hoja de datos, Descripción, Manual

MBR1020~MBR10100
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 10 Amperes
TO-220AC
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
MECHANICALDATA
Case: TO-220AC molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams.
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL MBR1020 MBR1030 MBR1040 MBR1045 MBR1050 MBR1060 MBR1080 MBR10100 UNITS
VRRM 20 30 40 45 50 60 80 100 V
Maximum RMS Voltage
VRMS 14 21 28 31.5 35 42 56 70 V
Maximum DC Blocking Voltage
VDC 20 30 40 45 50 60 80 100 V
Maximum Average Forward Current (See fig.1)
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IFSM
Maximum Forward Voltage at 10A, per leg
VF
Maxi mum D C Reverse C urrent Tc=25 OC
at Rated DC Blocking Voltage Tc=125OC
IR
Typical Thermal Resistance
RθJC
10
150
0.65
0.1
15
2
0.8
A
A
V
mA
OC / W
Operating Junction Temperature Range
TJ
-50 TO + 150
OC
Storage Temperature Range
TSTG
-50 TO + 175
OC
Notes :
Both Bonding and Chip structure are available.
REV.0-MAR.30.2005
PAGE . 1

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