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Numéro de référence | T1M3F-A | ||
Description | Sillicon Bidirectional Thyristors | ||
Fabricant | Lite-On | ||
Logo | |||
LITE-ON
SEMICONDUCTOR
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110℃)
High Surge Current of 10 Amps
Pb-Free Package
T1M3F-A SERIES
TRIACs
1.0 AMPERES RMS
400 thru 600 VOLTS
TO-92 (TO-226AA)
TO-92
DIM. MIN. MAX.
A 4.45 4.70
B 4.32 5.33
C 3.18 4.19
D 1.15 1.39
E 2.42 2.66
F
12.7
------
G 2.04 2.66
I 3.43 -----
All Dimensions in millimeter
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open)
T1M3F400A
T1M3F600A
Symbol
VDRM,
VRRM
Value
400
600
Unit
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = 50℃)
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25℃)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t ≦2.0us ,Tc = 80℃)
Average Gate Power (Tc = 80℃, t ≦8.3 ms )
Peak Gate Current ( t ≦2.0us ,Tc = 80℃)
Peak Gate Voltage ( t ≦2.0us ,Tc = 80℃)
Operating Junction Temperature Range
Storage Temperature Range
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
IT(RMS)
1.0 Amp
ITSM
10.0
Amps
22
It
0.60
As
PGM 5.0 Watt
PG(AV)
0.1 Watt
IGM 1.0 Amp
VGM 5.0 Volts
TJ -40 to +110 ℃
Tstg -40 to +150 ℃
REV. 3, Oct-2010, KTXD13
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Pages | Pages 5 | ||
Télécharger | [ T1M3F-A ] |
No | Description détaillée | Fabricant |
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