PDF AFT05MS004NT1 Data sheet ( Hoja de datos )

Número de pieza	AFT05MS004NT1
Descripción	RF Power LDMOS Transistor
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 20.9 74.9 4.9 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 (2) 0.10 17.8 61.8 6.1 350–520 (3) 0.12 15.4 49.4 4.2 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 435(3) CW > 65:1 at all 0.24 Phase Angles (3 dB Overdrive) 9.0 No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 136–174 MHz VHF broadband reference circuit. 3. Measured in 350–520 MHz UHF broadband reference circuit. Features  Characterized for Operation from 136 to 941 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Typical Applications  Output Stage VHF Band Handheld Radio  Output Stage UHF Band Handheld Radio  Output Stage for 700–800 MHz Handheld Radio  Driver for 10–1000 MHz Applications Document Number: AFT05MS004N Rev. 0, 7/2014 AFT05MS004NT1 136–941 MHz, 4 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR SOT--89 Source 2 123 Gate Source Drain Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 1 1 page 520 MHz NARROWBAND PRODUCTION TEST FIXTURE VGG C3 C2 C1 B1 C4 VDD C11 C10 C9 C12 C7 R6 R1 R2 C5 R3 R4 C6 R5 C13 L1 L2 C14 C15 C16 C8 D57923 AFT05MS004N Rev. 0 Figure 4. AFT05MS004NT1 Narrowband Test Circuit Component Layout — 520 MHz Table 6. AFT05MS004NT1 Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair--Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C9 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 11 pF Chip Capacitor ATC100B110JT500XT ATC C6, C7 13 pF Chip Capacitors ATC100B130JT500XT ATC C8, C15 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC C12 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp C13, C14 16 pF Chip Capacitors ATC100B160JT500XT ATC C16 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC L1 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft L2 5 nH, 2 Turn Inductor A02TKLC Coilcraft R1, R2, R3, R4, R5 1.5 , 1/4 W Chip Resistors RC1206FR--071R5L Yageo R6 27 , 1/4 W Chip Resistor CRCW120627R0FKEA Vishay PCB Rogers RO4350, 0.030, r = 3.66 D57923 MTL RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 5 5 Page TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT 22 90 21 80 20 D 70 19 60 18 17 Gps 50 8 16 7 15 14 VDD = 7.5 Vdc Pin = 0.1 W IDQ = 100 mA Pout 6 5 13 4 135 140 145 150 155 160 165 170 175 f, FREQUENCY (MHz) Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin 6 f = 155 MHz 5 4 VDD = 7.5 Vdc, Pin = 0.1 W 3 VDD = 7.5 Vdc, Pin = 0.05 W 2 1 f = 155 MHz 0.8 VDD = 7.5 Vdc 0.6 Pin = 0.1 W 0.4 VDD = 7.5 Vdc Pin = 0.05 W 0.2 1 Detail A 0 0 0.5 1 1.5 2 2.5 3 VGS, GATE--SOURCE VOLTAGE (VOLTS) 3.5 0 0 0.5 1 1.5 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A Figure 12. Output Power versus Gate--Source Voltage 2.5 25 24 23 22 VDD = 7.5 Vdc IDQ = 100 mA 21 155 MHz 135 MHz D 175 MHz 80 70 60 50 40 20 30 19 155 MHz 20 18 10 17 175 MHz 16 135 MHz Pout 8 7 15 Gps 6 14 155 MHz 13 175 MHz 5 4 12 3 11 135 MHz 2 10 1 90 0.01 0.1 0.3 Pin, INPUT POWER (WATTS) Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency RF Device Data Freescale Semiconductor, Inc. AFT05MS004NT1 11 11 Page

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